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| NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/C Total Power Dissipation (TA = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case for 10sec max), TL . . . . . . . . +260C Note 1. Determined from power limitations due to saturation voltage at this current. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter DC Characteristics Collector Cutoff Current Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain ICBO IEBO VCB = 50V VCB = 50V, TA = +100C VEB = 5V VCE(sat) IB = 3mA, IC = 50mA VBE(sat) IB = 3mA, IC = 50mA hFE VCE = 4.5V, IC = 2mA - - - - - 180 - - - - - - 0.1 15 0.1 0.30 0.85 540 A A A V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Small-Signal Characteristics Small-Signal Current Gain hfe VC = 4.5V, Frequency of Measurement =1000cps VCE = 10V, IC = 1mA, f = 1kc Input Impedance Output Admittance Voltage Feedback Ratio hie hoe hre VCE = 10V, IC = 1mA, f = 1kc VCE = 10V, IC = 1mA, f = 1kc VCE = 10V, IC = 1mA, f = 1kc 180 150 4200 10 0.2 - - - - - - 300 8300 20 0.4 mhos x 10-3 Symbol Test Conditions Min Typ Max Unit .350 (8.89) .187 (4.76) .156 (3.95) .325 (8.27) .125 (3.17) Dia .500 (12.7) Min .017 (0.45) Dia .100 (2.54) .050 (1.27) 3 .263 (6.7) Max .127 (3.25) 2 1 Pin Number NTE192/193 1 C 2 B C 3 E E NTE192A/193A B |
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